Electrical effects and thermal stability of plasma damage in aluminum gallium nitride alloys. Ahad Ali Syed
ISBN: 9781109416091
Published:
NOOKstudy eTextbook
107 pages
Electrical effects and thermal stability of plasma damage in aluminum gallium nitride alloys. by Ahad Ali Syed
| NOOKstudy eTextbook | PDF, EPUB, FB2, DjVu, talking book, mp3, RTF | 107 pages | ISBN: 9781109416091 | 6.75 Mb
The focus of this thesis is the electrical effects and thermal stability of plasma damage in AlGaN alloys. The effects of surface treatment using Ar and Cl2/BCl3 inductively coupled plasmas on the rectifying characteristics of Pt/Au contacts to AlxGaMoreThe focus of this thesis is the electrical effects and thermal stability of plasma damage in AlGaN alloys.
The effects of surface treatment using Ar and Cl2/BCl3 inductively coupled plasmas on the rectifying characteristics of Pt/Au contacts to AlxGa 1-xN (x=0--0.5) were investigated. Plasma treatment increased the conductivity of GaN and Al 0.1Ga0.9N surfaces, making the rectifying contacts into Ohmic contacts. For higher Al-content AlGaN, the Schottky diodes turned leaky after Cl2/BCl3 plasma treatment, where damage creation and etching occur simultaneously, whereas the diodes become more rectifying upon Ar plasma exposure, in which plasma damage accumulates.
A time-dependent study of Ar plasma treatment supports the hypothesis that the energy level of plasma damage in high-Al content AlGaN may be damage density dependent, and damage accumulation during Ar plasma exposure results in a high-resistivity region compensated by deep-level defect states.-Further, the thermal stability of as-grown and plasma-treated Al xGa1-xN (x=0--0.5) has been studied. High temperature annealing up to 800°C in N2 ambient after plasma treatment produced significant recovery of the IV characteristics of Schottky diodes while at temperatures higher than 800°C, the characteristics were degraded due to preferential surface loss of nitrogen and localized surface dissociation.
A more complete removal of plasma damage in AlGaN requires annealing at temperatures >800°C with a careful surface protection. Schottky contacts formed on as-grown AlGaN samples subjected to high temperature annealing in an Ar ambient show improvement in the electrical characteristics up to 800°C. After annealing at higher temperatures, the GaN Schottky diodes became leakier, whereas the AlGaN diodes were more rectifying, confirming that N vacancies are shallow donors in GaN, but act as deep-level states in high-Al AlGaN. These new findings emphasize the need to reduce plasma damage introduced during etching processes required to fabricate AlGaN-based electronic and optoelectronic devices.
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